May 3, 2023 · The answer lies in the world’s first application of the High-K Metal Gate (HKMG) process to mobile DRAM. This article will summarize the principle of the HKMG process and how this technology was applied to the LPDDR5X and LPDDR5T. 1 Scaling: The reduction in size of semiconductors to produce better device performance, power efficiency, and cost.

Sep 10, 2024 · While the semiconductor industry struggled to continue mobile DRAM scaling 1, SK hynix made a significant breakthrough with the world’s first application of High-K Metal Gate (HKMG) to mobile DRAM.

Jun 27, 2024 · HBM is a high-value, high-performance product that revolutionizes data processing speeds by connecting multiple DRAM chips with through-silicon via (TSV). The five generations of HBM began with the original HBM, followed by HBM2, HBM2E, HBM3, and HBM3E.

Nov 8, 2022 · 由于传统微缩 (scaling)技术系统的限制，DRAM的性能被要求不断提高，而HKMG (High-k/Metal Gate)则成为突破这一困局的解决方案。 SK海力士通过采用该新技术，并将其应用于全新的1anm LPDDR5X DRAM, 即便在低功率设置下也实现了晶体管性能的显著提高。 本文针对HKMG及其使用益处进行探讨。 组成DRAM的晶体管 (Transistor)包括存储数据的单元晶体管 (Cell Transistor)、恢复数据的核心晶体管 (Core Transistor)，以及涉及控制逻辑和数据输入和输出 …

Nov 8, 2022 · By using this new technology, SK hynix has dramatically improved transistor performance and has applied it to its new 1anm LPDDR5X DRAM, effective even at low power settings. This article will examine what HKMG is and look into the benefits of its use.

Samsung is leading the pack with its latest 5th generation high bandwidth memory (HBM) device: HBM3E 12H DRAM. This device is designed to give a significant edge to high-demand systems, data centers, AI applications, and advanced graphics-unit processors that power AI computing.

Jul 27, 2015 · The GPU is massive measuring in at 23mm by 27mm large, and is believed to be fabricated using TSMC’s 28nm HKMG process. The HBM uses through silicon vias (TSVs) to connect the DRAM dies and base logic die together , and this is …

Oct 19, 2023 · HKMG 기술은 고유의 구조 덕분에 전력 소모를 크게 줄일 수 있으며, 이는 반도체 기기의 배터리 수명을 연장하고, 발열을 줄이며, 전체적인 성능을 향상시킵니다. HKMG 기술의 핵심은 높은 유전율(high-k) 다이얼렉트릭과 금속 게이트(metal gate)의 조합입니다.

Mar 28, 2024 · In a key appointment within HBM Business, Vice President Unoh Kwon became head of HBM Process Integration (PI). While working as a DRAM development research fellow in 2022, Kwon broke new ground by becoming the first to apply the HKMG 2 process to the mobile DRAM LPDDR, and this led to the successful development of the ultra-high-speed and low ...

• The first DDR5 product with high-κ metal gate (HKMG) transistor applied, making this the most advanced DRAM product available • Gate-first HKMG scheme adopted • 2nd HKMG product after HKMG GDDR6 from Samsung • Samsung leads HKMG DRAM technology • HKMG will become mainstream and broadly adopted in upcoming DRAM generations