Variable EB Mask Writer system "EBM-9500PLUS" for 7nm+/5nm node. 1) 50kV acceleration voltage enables writing in greater contrast. 2) Multiple pass writing method improves the …

Electron beam mask writers precisely position the electrons to write complex circuit patterns on the photomask with an accuracy of a nanometer-order scale.

We developed EBM-9500PLUS for 7nm+ tn generation. Charging Effect Reduction (CER) technology is newly introduced to improve Image Placement error with high-density layouts. …

Oct 25, 2016 · It is designed to realize better resolution and higher throughput than EBM-9500, our latest variable-shaped-beam writer, at shot count higher than 500 Gshot/pass.

Feb 22, 2017 · Fujimura: The NuFlare EBM-9500, which is writing most leading-edge masks today, has a GPU-accelerated mechanism in it. It’s simulating the temperature of every part of …

A newly introduced electron beam source enables higher current density of 1200A/cm 2 . Heating effect correction function has also been newly introduced to satisfy the requirements for both …

Oct 25, 2016 · A newly introduced electron beam source enables higher current density of 1200A/cm 2 . Heating effect correction function has also been newly introduced to satisfy the …

The EB Mask Writer system "EBM-9500" with enhanced placement accuracy is suitable for developing next generation photo-masks. 1) 50kV acceleration voltage enables greater …

Jan 19, 2017 · This, in turn, impacts mask write times, at least for the most complex photomasks at the leading edge. To address those issues, NuFlare has introduced a new and faster VSB …

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