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We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit ...
Graphene Surface Functionalization with Pyrene-, Acridine-, and Fluorenyl-Linkers for DNA Hybridization Studies Using Electrolyte-Gate Graphene Field Effect Transistors ...
Beyond the Gates: Anita leaves a mess in Chicago to find a mess at home too | Image: CBS The Matriarch of the Dupree family is back, and just like when she was in Chicago with the Articulettes, things ...
Today I stood on the sidewalk of Keokuk’s Main Street holding a protest sign, along with other like-minded citizens, because we are concerned about the direction in which our country ...
This work suggests a FGMOS-based efficient exclusive-OR (XOR) gate design for PFSCL. The pull-down transistor is changed to a FGMOS transistor in the proposed design, which eliminates the pull-down ...
Trump rips MAGA ‘boys’ and ‘gals’ in epic Epstein-gate rant: ‘Let Pam Bondi do her job’ President urges supporters to unify, saying he doesn’t ‘like what’s happening’ ...
Beyond the Gates Beyond the Gates Beyond the Gates Recap, July 9, 2025: Martin and Elon separately avoided telling the truth about Martin's fateful night ...
The capacitance boost using HZO stack was originally tailored for silicon devices in Sayeef Salahuddin’s lab at UC Berkeley EECS. Drawing inspiration from prior work, the team—led by Asir Khan and ...
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