A technical paper titled “Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors” was ...

with and without the incorporation of Schottky barrier lowering (SBL). Model calculations have shown that the WKB model can predict tunneling current through a Schottky barrier with reasonable ...

A new study shows how Pd-enriched high-entropy alloy nanocrystals integrated with TiO2 dramatically boost photocatalytic ...

Fifty years ago, Lee Elder broke the color barrier at the Masters, confronting both the ugly history of racism in America and the natural beauty of Augusta National Golf Club. On April 8 ...

Formed on native substrates, AlN Schottky barrier diodes offer a 3 kV blocking voltage and excellent performance at elevated temperatures Engineers at Arizona State University are claiming to have ...

Rohm’s 100-V Schottky barrier diodes with a proprietary trench MOS structure deliver industry-leading reverse recovery time for high-speed switching applications. Rohm Semiconductor has released a new ...

A new technical review paper titled “The Schottky barrier transistor in emerging electronic devices” was published by researchers at THM University of Applied Sciences, Chalmers University of ...

Schottky Barrier Diodes are built utilizing a metal electrode bonded to an N-type semiconductor that has undergone light doping, as opposed to a standard pn-junction diode, which is composed of a ...

Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to achieve both low on-resistance and high reliability. The company reports that the design reduces ...