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A high linear mono die FEM (Front End Module) 1.8-5GHz is presented in this paper. The FEM consists of a 0.13 μm SiGe BiCMOS broadband power amplifier. The power amplifier circuit adopts a class AB ...
This paper presents a broadband high-efficiency and good-linearity power amplifier for L-band applications in a 2-μm InGaP/GaAs heterojunction bipolar transistor (HBT) process. An off-chip ...
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