The comparison of XRD patterns for our controlled sample {silicon (100 and reported by Jams D. Rachwal (Figure 2 (c 1)) reveals that intensity peak appearing at 2θ = 75.6 in XRD pattern of controlled ...

XRD phi-scan for (221), (111) and (110) planes of germanium show sharp peaks at 45° interval, proving the in-plane epitaxy of germanium which have a four-fold cubic symmetry. The epitaxial germanium ...

In a 2D-XRD experiment, a collimated beam of X-rays is directed onto a crystalline sample. The X-rays interact with the electrons in the atoms, causing them to scatter. When the scattered X-rays ...

3.2. Effect of Silicon Content in NbFAPSO-5 Molecular Sieve High silicon content in NbFAPSO-5 molecular sieve result in the disturbance of XRD patterns. In this study, 1 ml to 3 ml was successfully ...

A two-step growth method for high-quality epitaxial germanium films on silicon (100) is presented. During the first step a seed layer of crystalline Ge is deposited on silicon. The seed layer is a ...