At ISPSD2013, we presented an SC-diode that realizes low forward voltage drop (VF), low reverse recovery loss and low leakage current at high temperature of over 175 °C, with a combination of very low ...

Abstract: TiSi x -Si Schottky diode on an n-well is designed and fabricated. The device structure is analyzed in depth. The influence of the main parameters on the diode's cut-off frequency is ...

Vishay Intertechnology’s FCSP FlipKY chip-scale Schottky diodes have extremely small form factors. The series announced today includes 0.5-A, 1.0-A, and 1.5-A devices, with footprint dimensions ...

Figure 4 shows the top view of the SAPIN and a simplified cross-section drawing of the SAPIN diode. 1 As a normal PIN diode, the device has a p+ anode, undoped i-region, and an n+ cathode connection.

Low turn-on voltage AlGaN/GaN Schottky barrier diode with a low work function anode and high work function field plate Journal: Applied Physics Letters Published: 2024-09-16 DOI: 10.1063/5.0223396 ...

Constructing Dual Schottky Junctions for High-Performance Zinc Anode Journal: Advanced Functional Materials Published: 2024-11-14 DOI: 10.1002/adfm.202411582 Affiliations: 2 Authors: 7 Go to article ...