A research team has successfully developed a new composition and processing technology for transparent plasma-resistant ...

3D NAND flash memory is different from traditional single-layer NAND because it vertically stacks memory cells to cram more ...

Standard NAND flash storage is used in microSD cards, USB drives, and solid-state drives in computers and phones. To fit more gigabytes into smaller spaces, manufacturers ...

The researchers compared results from this process to a more advanced cryo-etching process that uses hydrogen fluoride gas to create the plasma. "Cryo etch with the hydrogen fluoride plasma showed ...

Dr. Ho Jin Ma's research team from the Nano Materials Research Division at the Korea Institute of Materials Science (KIMS), ...

The Korea Research Institute of Standards and Science (KRISS) has successfully developed a system that diagnoses the lifetime ...

Researchers from the University at Buffalo, Central South University, Shandong Normal University, Sungkyunkwan University, TU ...

"Critical plasma etch capabilities will be an integral part ... Designed for high-volume production with maximum process yield, Akara optimizes wafer output with millisecond response times.

An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make ...

However, the process, known as reactive ion etching, isn't fully understood and could be improved. One recent development involves keeping the wafer––the sheet of semiconductor material to be ...