Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving ...

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Indradeep Ghosh, a technology leader with over 25 years in industrial R&D, explores the evolving landscape of quantum ...

Abstract: A novel all-optical bit-error monitoring system is demonstrated by cascading two all-optical logic gates: an inverted wavelength converter and an optical ...

Abstract: In this paper, an analytical model of a split-gate dielectric modulated Metal-oxide-semiconductor field-effect transistor (DM-MOSFET) for label free electrical detection of the biomolecules ...

Aromatic soluble polyimides (PIs) have been widely used in organic field-effect transistors (OFETs) as gate dielectric layers due to their promising features such as outstanding chemical resistance, ...

Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States ...