Pictured above: (a) Schematic energy band diagram of holes trapped in SiO2/GaN MOS structure. (b) Experimental C–V characteristics of MOS capacitor annealed at 400 °C in O2 (black solid line), and ...

Pictured above: (a) Schematic energy band diagram of holes trapped in SiO2/GaN MOS structure. (b) Experimental C–V characteristics of MOS capacitor annealed at 400 °C in O2 (black solid line), and ...

The use of an MOS capacitor as an integrated load element in dynamic inverters is reviewed and a particular approach (direct cascading) to its application is demonstrated. Experimental n-channel ...

A physical-based model for MOS capacitors in accumulation is presented, which is able to predict the non-linear distortion accurately. The key idea of this work is to include the polysilicon gate ...