V, 20-A SiC Schottky diodes contribute to high-efficiency power conversion in AI server infrastructure and solar inverters.

Toshiba launched second generation 650V silicon carbide (SiC) schottky barrier diodes (SBDs) that improve on the surge forward current offered by the company's current products by approximately 70%.

Although Fig. 2 is a simple circuit, it has the disadvantage of high forward voltage (V F) when the diode conducts. For example, the typical V F of a Schottky diode is ~0.4V and can result in ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...