The FMCA series uses the next generation of power semiconductor SiC (silicon carbide) and a 650 V breakdown voltage in a Schottky barrier configuration, making it suitable for continuous current ...

Diodes has released its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the DIODES DSCxxA065 series with eleven products rated at 650V (4A, 6A, 8A, and 10A) and the ...

The SCS1xxAGC SCS1xxAGC series of high performance silicon carbide (SiC) Schottky barrier diodes (SBD) is said to improve power conversion efficiency in applications such as PFC/power supplies, solar ...

MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for high-frequency applications where ...

Microchip also provides a broad portfolio of 700, 1200 and 1700V SiC SBD and Metal Oxide Silicon Field Effect Transistor (MOSFET) power modules utilizing its newest generation of SiC die.

Compared to the second generation, the device capacitances of the Infineon third generation SiC Schottky diodes are about 40 percent lower, which reduces switching losses. For example in a 1 kW ...

Molecular Diodes Induced by a Schottky Barrier with a Gold–Silicon Doped Electrode Journal: The Journal of Physical Chemistry Letters Published: 2024-07-01 DOI: 10.1021/acs.jpclett.4c01351 ...

News Release 7-May-2024 Adjusting Schottky barrier height—An Important method applied in semiconductor industry and sensors Peer-Reviewed Publication Science China Press image: ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...