A novel full-wave rectifier turns an audio power amplifier into a simple modulator, that is then used to modulate an ...

The chipset creates a highly scalable amplifier architecture that suits power levels from 100W up to 500W into 8Ω. Up to 8 single-ended or 4 bridge-tied load channels can be supported by a single ...

A simple circuit modification can effectively reduce temperature-induced noise for a JFET-based amplifier at a reasonable ...

The ID Series GaN power transistors operate from 1.8GHz to 4.2GHz, with available saturated power levels of 410W, 460W, 700W, and 800W.

Where PDISS is the total power dissipation contributed by parasitic losses, and by the conductive and switching losses in the output transistors of the Class-D amplifier stage of the audio system ...

Due to its high output power, the 300 W MRF6P3300H device allows power amplifier manufacturers to reduce system-level costs because fewer RF transistors are needed to achieve a given power target.

The amp features McIntosh’s new DualView Power Output Meter which stacks two meters in a single window. One of the meters displays the output of the 300-Watt vacuum tube section while the other ...

In order to develop the necessary technology, the project Magellan — High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application — was launched in 2024.

The output stage is a direct-coupled, solid-state amplifier that pumps out 200 Watts per channel into 8 Ohm speakers, or 320 Watts per channel into 4 Ohm speakers – that’s double the power of ...

RF performance specifications include an output power of 47.0 dBm (typical) with 40-dBm input power, typical linear gain of 11.0 dB, and drain current of 5.0 A at 24 V.